s mhop microelectronics c orp. a symbol v ds v gs i dm a i d units parameter 40 v v 20 gate-source voltage drain-source voltage features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.0 www.samhop.com.tw dec,14,2012 1 details are subject to change without notice. t a =25 c w p d c -55 to 150 t a =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja t a =70 c a e as mj single pulse avalanche energy d t a =70 c w a a a 64 9 45 2.5 STM4446 green product 7.2 1.6 product summary v dss i d r ds(on) (m ) max 40v 9a 26 @ vgs=4.5v 16.5 @ vgs=10v n-channel logic level enhancement mode field effect transistor so-8 1 suface mount package. 4 3 2 1 d d d d g s s 5 6 7 8 s
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) v 13 m ohm v gs =10v , i d =4.5a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics 16.5 STM4446 ver 1.0 www.samhop.com.tw dec,14,2012 2 12.13 g fs s c iss 845 pf c oss 124 pf c rss 100 pf q g 17.6 nc 19 18.3 32 t d(on) 14 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =4.5a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance c f=1.0mhz c v sd nc q gs nc q gd 1.7 4.8 gate-drain charge gate-source charge diode forward voltage v ds =20v,i d =4.5a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =3a 0.8 1.3 v notes v ds =20v,i d =4.5a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ 18 v gs =4.5v , i d =3.5a m ohm 19 26 nc 7.3 v ds =20v,i d =4.5a,v gs =4.5v
STM4446 ver 1.0 www.samhop.com.tw dec,14,2012 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 35 28 21 14 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 30 24 18 12 6 0 0 1.0 6.0 5.0 4.0 3.0 2.0 tj=125 c -55 c 25 c 48 40 32 24 16 8 0 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =4.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 7 v gs =10v v gs =4v v gs =5v v gs =4.5v v gs =4.5v 1 714212835 v gs =4.5v i d =3.5a v gs =3.5v
STM4446 ver 1.0 www.samhop.com.tw dec,14,2012 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 10 1 0.1 48 40 32 24 16 8 0 10 0 125 c 75 c 25 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c ciss coss crss 1200 1000 800 600 400 200 0 10 15 20 25 30 0 5 i d =4.5a 10 8 6 4 2 0 v ds =20v i d =4.5a 110 100 1 10 100 300 vds=20v,id=1a vgs=10v tr td(off ) tf 0.03 td(on) 8 6 4 2 0 2 4 8 6 16 14 12 10 100 r d s (on ) lim it v gs =10v single pulse t a =25 c dc 1m s 100us 1s 10m s
STM4446 ver 1.0 www.samhop.com.tw dec,14,2012 5 t p v (br )dss i as f igure 13b. o fr m w a ve s u nc l am p ed in d u ct i ve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance single pulse f igure 13a. u nc l am p ed s in d u ct i ve t e t ci r c u i t r g i as 0.01 t p d.u.t l v ds + - dd 20v v p dm t 1 t 2 1. r e ja (t)=r (t) * r e ja 2. r e ja =s ee datasheet 3. t jm- t a = p dm * r e ja (t) 4. duty cycle, d=t 1 /t 2
STM4446 ver 1.0 www.samhop.com.tw dec,14,2012 6 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.75 0.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l h x 45 o a a1 a2 c d e e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
STM4446 ver 1.0 www.samhop.com.tw dec,14,2012 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0 +0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 m n w g v r s k h
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